silicon npn epitaxial planar type transistor.
l Low Noise Figure, High Gain l NF = 1.1dB, |S21e|2 = 10dB (f = 1GHz)
Unit in mm
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC
Collector-Base Voltage Collector-Emitter V.
FEATURES:
l Low Noise Figure, High Gain l NF = 1.1dB, |S21e|2 = 10dB (f = 1GHz)
Unit in mm
MAXIMUM RATINGS (Ta = 25°C).
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